MR18R162GDF0 Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	MR18R162GDF0
Datasheet	MR18R162GDF0 MR18R16224DF0 Datasheet (PDF)
File Size	442.47 KB
Manufacturer	Samsung Semiconductor
Description	(MR1xR1622(4/8/G)DF0) Key Timing Parameters

MR18R162GDF0 Overview

MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) First copy. The RIMM module consists of 256/288Mb devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits.

MR18R162GDF0 Key Features

High speed up to 1066 MHz RDRAM storage
184 edge connector pads with 1mm pad spacing
Module PCB size : 133.35mm x 31.75mm x 1.27mm
256Mb and 288Mb base PC800 RIMM Module
Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25” x 1.375” x 0.05”)
256Mb and 288Mb base PC1066 RIMM Module
Gold plated edge connector pad contacts
Serial Presence Detect(SPD) support
Operates from a 2.5 volt supply (±5%)
Powerdown self refresh modes

More Datasheets from Samsung Semiconductor

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Part Number	Description
MR18R162GDF0	(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R162GAF0	(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR18R1622AF0	(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR18R1622DF0	(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1622DF0	(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1624AF0	(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR18R1624DF0	(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1624DF0	(MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1624GEG0	Key Timing Parameters
MR18R1628DF0	(MR1xR1622(4/8/G)DF0) Key Timing Parameters

Datasheet Details

MR18R162GDF0 Overview

MR18R162GDF0 Key Features

More Datasheets from Samsung Semiconductor

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