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MR18R162GDF0 Datasheet (MR1xR1622(4/8/G)DF0) Key Timing Parameters

Manufacturer: Samsung Semiconductor

Download the MR18R162GDF0 datasheet PDF. This datasheet also includes the MR18R16224DF0 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MR18R16224DF0_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy.

* Based on the 1.4 ver.

(July 2002) 256/288Mbit A-die RIMM Module Datasheet Page 0 Version 1.

Key Features

  • High speed up to 1066 MHz RDRAM storage.
  • 184 edge connector pads with 1mm pad spacing.
  • Module PCB size : 133.35mm x 31.75mm x 1.27mm (5.25” x 1.25” x 0.05”) - 256Mb and 288Mb base PC800 RIMM Module.
  • Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25” x 1.375” x 0.05”) - 256Mb and 288Mb base PC1066 RIMM Module.
  • Each RDRAM device has 32 banks, for a total of 512, 256, 128, 64 banks on each 512/576MB, 256/288MB, 128/144MB, 64/72MB module respectively.

More Datasheets from Samsung Semiconductor

Part Number Description
MR18R162GDF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R162GAF0 (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR18R1622AF0 (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR18R1622DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1622DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1624AF0 (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
MR18R1624DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1624DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters
MR18R1624GEG0 Key Timing Parameters
MR18R1628DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters