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MR18R162GDF0 - (MR1xR1622(4/8/G)DF0) Key Timing Parameters

This page provides the datasheet information for the MR18R162GDF0, a member of the MR18R16224DF0 (MR1xR1622(4/8/G)DF0) Key Timing Parameters family.

Datasheet Summary

Description

Signal Pins A1, A3, A5, A7, A9, A11, A13, A15, A17, A19, A21, A23, A25, A27, A29, A31, A33, A39, A52, A60, A62, A64, A66, A68, A70, A72, A74, A76, A78, A80, A82, A84, A86, A88, A90, A92, B1, B3, B5, B7, B9, B11, B13, B15, B17, B19, B21, B23, B25, B27, B29, B31, B33, B39, B52, B60, B62, B64, B66, B68

Features

  • High speed up to 1066 MHz RDRAM storage.
  • 184 edge connector pads with 1mm pad spacing.
  • Module PCB size : 133.35mm x 31.75mm x 1.27mm (5.25” x 1.25” x 0.05”) - 256Mb and 288Mb base PC800 RIMM Module.
  • Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25” x 1.375” x 0.05”) - 256Mb and 288Mb base PC1066 RIMM Module.
  • Each RDRAM device has 32 banks, for a total of 512, 256, 128, 64 banks on each 512/576MB, 256/288MB, 128/144MB, 64/72MB module respectively.

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Datasheet preview – MR18R162GDF0

Datasheet Details

Part number MR18R162GDF0
Manufacturer Samsung semiconductor
File Size 442.47 KB
Description (MR1xR1622(4/8/G)DF0) Key Timing Parameters
Datasheet download datasheet MR18R162GDF0 Datasheet
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Full PDF Text Transcription

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MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIMM Module Datasheet Page 0 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 (16Mx16)*2(4/8/16)pcs RIMM Module based on 256Mb D-die, 32s banks,16K/32ms Ref, 2.5V (16Mx18)*2(4/8/16)pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V Overview The RIMM module is a general purpose high- performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations and other applications where high bandwidth and low latency are required. The RIMM module consists of 256/288Mb devices.
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