SW4N60A Key Features
- High ruggedness
- RDS(ON) (Max 2.2 Ω)@VGS=10V
- Gate Charge (Typ 25nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Part: SW4N60A
- Manufacturer: Samwin
- Size: 887.22 KB
Other SW4N60A Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
SEMIPOWER |
SW4N60B | N-channel I-PAK/D-PAK/TO-220F MOSFET |
|
SEMIPOWER |
SW4N60D | MOSFET |
|
SEMIPOWER |
SW4N60K | N-Channel MOSFET |
SW4N60A Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.