Datasheet Details
| Part number | SW70N10V |
|---|---|
| Manufacturer | Samwin |
| File Size | 761.84 KB |
| Description | N-channel MOSFET |
| Datasheet | SW70N10V-Samwin.pdf |
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Overview: SW70N10V N-channel Enhanced mode TO-251/TO-252/TO-220 MOSFET.
| Part number | SW70N10V |
|---|---|
| Manufacturer | Samwin |
| File Size | 761.84 KB |
| Description | N-channel MOSFET |
| Datasheet | SW70N10V-Samwin.pdf |
|
|
|
1 This power MOSFET is produced with advanced technology of SAMWIN.
3 This technology enable the power MOSFET to have better characteristics, including Fast switching time, low on resistance, low gate charge and especially excellent Avalanche characteristics.
Order Codes Item Sales Type 1 SW I 70N10V 2 SW D 70N10V 3 SW P 70N10V Marking SW70N10V SW70N10V SW70N10V Package TO-251 TO-252 TO-220 Packaging TUBE REEL TUBE Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed (note 1) Gate to source voltage Single pulsed avalanche energy (note 2) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt (note 3) Total power dissipation (@TC=25oC) Derating factor above 25oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds.
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