2SD1047C - NPN Triple Diffused Planar Silicon Transistor

Sanyo

Datasheet Details

Large current capacitance.
Wide ASO and high durability against breakdown.
Adoption of MBIT process. Specifications ( ) : 2SB817C Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Tc=25°C DataSheet4U. com Electrical Characteristics a.

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