* Low-saturation collector-to-emitter voltage : VCE(sat)=
* 0.5V(PNP), 0.4V(NPN) max.
* Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2022A [2SB828/2SD1064] ( ) : 2SB828 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base
D1064
Sanyo
102.42 KB
Pnp/npn epitaxial planar silicon tranasistors.
Ordering number:722G PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB828/2SD1064 50V/12A Switching Applications Applications Relay drivers, h.
📁 Related Datasheet
D1060 2SD1060 (Sanyo Semicon Device)
D1061 2SD1061 (Sanyo Semicon Device)
D1062 2SD1062 (SavantIC)
D1062 2SD1062 (Sanyo)
D1063 2SD1063 (Sanyo)
D1065 2SD1065 (Sanyo Semicon Device)
D1065C5 SiC Schottky Barrier diodes (Infineon)
D1067 monolithic step-down switch mode converter (DMS)
D1069 2SD1069 (Toshiba Semiconductor)
D1069 SILICON NPN DOUBLE DIFFUSED TYPE TRANSISTOR (Toshiba)
