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Sanyo Electric Components Datasheet

2SA1011 Datasheet

PNP/NPN Epitaxial Planar Silicon Transistors

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Ordering number:ENN544G
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1011/2SC2344
High-Voltage Switching, AF Power Amp,
100W Output Predriver Applications
Package Dimensions
unit:mm
2010C
[2SA1011/2SC2344]
10.2
3.6 5.1
4.5
1.3
1.2
0.8 0.4
( ) : 2SA1011
Specifications
Absolute Maximum Ratings at Ta = 25˚C
123
2.55 2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO220AB
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
Conditions
Ratings
(–)180
(–)160
www.DataSheet.co.kr
(–)6
(–)1.5
(–)3
25
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE
fT
VCB=(–)120V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)300mA
VCE=(–)10V, IC=(–)50mA
Output Capacitance
Cob VCB=(–)10V, f=1MHz
Base-to-Emitter Voltage
VBE
VCE=(–)5V, IC=(–)10mA
* : The 2SA1011/2SC2344 are classified by 300mA hFE as follows :
Rank
D
E
hFE 60 to 120 100 to 200
Ratings
min typ max
Unit
(–)10 µA
(–)10 µA
60* 200*
100 MHz
(30) pF
23 pF
(–)1.5
V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/30196TS APS 8-3288/D251MH/3207AT/2265MY, TS No.544-1/4
Data


Sanyo Electric Components Datasheet

2SA1011 Datasheet

PNP/NPN Epitaxial Planar Silicon Transistors

No Preview Available !

Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
2SA1011/2SC2344
Symbol
Conditions
VCE(sat) IC=(–)500mA, IB=(–)50mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=
IE=(–)10mA, IC=0
ton See specified Test Circuit
tf See specified Test Circuit
tstg See specified Test Circuit
Ratings
min typ
(–0.5)
0.3
(–)180
(–)160
(–)6
(0.29)
0.15
(0.19)
0.48
(0.48)
0.81
max
Unit
V
V
V
V
V
µs
µs
µs
Switching Time Test Circuit
INPUT
IB1
1
PW=20µs
IB2
VR
51 200
1µF
OUTPUT
40
1µF
20V
--2V 10IB1=--10IB2=IC=0.5A
(For PNP, the polarity is reversed.)
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--2.4
--2.0
IC -- VCE
2SA1011
--8mA
--7mA
--6mA
--5mA
--4mA
--3mA
--2mA
--1mA
IB=0
--10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE – V ITR02941
IC -- VBE
2SA1011
VCE=--5V
--1.6
--1.2
--0.8
--0.4
00
--0.2 --0.4
--0.6
--0.8 --1.0
--1.2 --1.4
Base-to-Emitter Voltage, VBE – V ITR02943
www.DataSheet.co.kr
1.0
0.8
0.6
0.4
0.2
0
0
2.4
2.0
IC -- VCE
8mA
7mA
6mA
5mA
4mA
2SC2344
3mA
2mA
1mA
IB=0
10 20 30 40 50
Collector-to-Emitter Voltage, VCE – V ITR02942
IC -- VBE
2SC2344
VCE=5V
1.6
1.2
0.8
0.4
00 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE – V ITR02944
No.544-2/4
Datasheet pdf - http://www.DataSh


Part Number 2SA1011
Description PNP/NPN Epitaxial Planar Silicon Transistors
Maker Sanyo Semicon Device
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2SA1011 Datasheet PDF





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