2SA1380 transistors equivalent, pnp/npn epitaxial planar silicon transistors.
* High breakdown voltage : VCEO≥200V.
* Small reverse transfer capacitance and excellent
high-frequnecy characteristics
: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. <.
Features
* High breakdown voltage : VCEO≥200V.
* Small reverse transfer capacitance and excellent
high-frequnec.
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