2SA1436 transistor equivalent, pnp epitaxial planar silicon transistor.
* Adoption of MBIT process.
* High DC current gain (hFE=500 to 1200).
* Large current capacity.
* Low collector-to-emitter saturation voltage
(VCE(sat)=0..
Applications
* AF amplifier, various drivers, muting circuit.
Features
* Adoption of MBIT process.
* High D.
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