* Adoption of MBIT process.
* Large current capacity.
* Low collector-to-emitter saturation voltage.
* High-speed switching.
* High allowable power dissipation. Specifications ( ):2SA2037 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltag
2SA2037
Sanyo Semicon Device
37.54 KB
Pnp / npn epitaxial planar silicon transistors.
Ordering number : ENN6587 2SA2037 / 2SC5694 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2037 / 2SC5694 DC / DC Converter Applications Applicat.
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