2SC3292
2SC3292 is NPN Transistor manufactured by SANYO.
Features
- High DC current gain.
- Large current capacity and wide ASO.
- Contains 60±10V Zener diode between collector and base.
- Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process.
- 15m J reverse energy rating.
Package Dimensions unit:mm 2010C
[2SC3292]
Specifications
JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
- : Built-in Zener diode (60±10V)
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Tc=25˚C
Conditions
Ratings 50- 50- 6 1.2 2.5 0.25 20 150
- 55 to +150
Unit V V V A A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO IEBO h FE f T VCE(sat) VBE(sat)
VCB=40V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.5A VCE=5V, IC=0.5A IC=0.5A, IB=2m A IC=0.5A, IB=2m A
Ratings min typ
4000 180 1.0 max 10 2
1.5 2.0
Unit
µA m A
MHz V V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all...
