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Sanyo Electric Components Datasheet

2SC3292 Datasheet

NPN Transistor

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Ordering number:EN1332A
NPN Planar Type Silicon Darlington Transistor
2SC3292
For General-Purpose Drivers
Applications
· Especially suited for use in switching of L load
motor driver, printer hammer driver, relay driver, etc.
Features
· High DC current gain.
· Large current capacity and wide ASO.
· Contains 60±10V Zener diode between collector and
base.
· Uniformity in collector-to-base breakdown voltage
due to adoption of accurate impurity diffusion
process.
· 15mJ reverse energy rating.
Package Dimensions
unit:mm
2010C
[2SC3292]
Specifications
JEDEC : TO-220AB
EIAJ : SC-46
1 : Base
2 : Collector
3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
* : Built-in Zener diode (60±10V)
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25˚C
Conditions
Ratings
50*
50*
6
1.2
2.5
0.25
20
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
VCB=40V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.5A
VCE=5V, IC=0.5A
IC=0.5A, IB=2mA
IC=0.5A, IB=2mA
Ratings
min typ
1000
4000
180
1.0
max
10
2
1.5
2.0
Unit
µA
mA
MHz
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/8253KI, TS No.1332–1/3


Sanyo Electric Components Datasheet

2SC3292 Datasheet

NPN Transistor

No Preview Available !

Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Unclamped inductive load enaegy
Turn-ON Time
Storage Time
Fall Time
2SC3292
Symbol
Conditions
V(BR)CBO
V(BR)CEO
Es/b
ton
tstg
tf
IC=0.1mA, IE=0
IC=1mA, RBE=
L=100mH, RBE=100
VCC=20V, IC=0.5A, IB1=–IB2=2mA
VCC=20V, IC=0.5A, IB1=–IB2=2mA
VCC=20V, IC=0.5A, IB1=–IB2=2mA
Switching Time Test Circuit
Es/b Test Circuit
Ratings
min typ
50 60
50 60
15
0.2
2.2
0.4
max
70
70
Unit
V
V
mJ
µs
µs
µs
No.1332–2/3


Part Number 2SC3292
Description NPN Transistor
Maker Sanyo Semicon Device
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2SC3292 Datasheet PDF





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