2SC3332 transistors equivalent, pnp/npn epitaxial planar silicon transistors.
* Hgih breakdown voltage.
* Excellent hFE linearity.
* Wide ASO and highly resistant to breakdown.
* Adoption of MBIT process.
Package Dimensions
unit:mm.
Features
* Hgih breakdown voltage.
* Excellent hFE linearity.
* Wide ASO and highly resistant to breakdown. .
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