2SC3495 transistor equivalent, npn epitaxial planar silicon transistor.
* Adoption of FBET process.
* High DC current gain (hFE=500 to 2000).
* High breakdown voltage (VCEO≥100V).
* Low collector-to-emitter saturation voltage
.
Applications
* AF amplifier, various driver, muting circuit.
Features
* Adoption of FBET process.
* High DC.
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