2SC3576 transistor equivalent, npn epitaxial planar silicon transistor.
* Adoption of FBET process.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V.
Applications
* LF general-purpose amplifiers, various drivers, muting circuit.
Features
* Adoption of FBET proc.
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