2SC3651 transistor equivalent, npn transistor.
* High DC current gain (hFE=500 to 2000).
* High breakdown voltage (VCEO≥100V).
* Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V).
* High VEBO.
Applications
* LF amplifiers, various drivers, muting circuit.
Features
* High DC current gain (hFE=500 to 2000.
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