2SC3650 transistor equivalent, npn epitaxial planar silicon transistor.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* Large current capacity (IC=1.2A).
* Ultrasmall .
Applications
* LF amplifiers, various drivers, muting circuit.
Features
* High DC current gain (hFE=800 to 3200.
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