* Adoption of FBET process.
* Fast switching speed. Package Dimensions unit:mm 2064 [2SA1705/2SC4485] ( ) : 2SA1705 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector C
2SC4485
Sanyo Semicon Device
122.48 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN3025 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1705/2SC4485 Low-Frequency Power Amplifier Applications Applications Vo.
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