* High speed (tf=100ns typ).
* High breakdown voltage (VCBO=1500V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process.
* On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4769] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 w w w . D a t a S h e e t 4 U .
2SC4769
Sanyo Semicon Device
129.81 KB
Npn transistor.
Ordering number:EN3665 NPN Triple Diffused Planar Silicon Transistor 2SC4769 Ultrahigh-Definition Color Display Horizontal Deflection Output Applica.
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