Ordering number : EN8649
P-Channel Silicon MOSFET
General-Purpose Switching Device
• Low ON-resistance.
• High-speed switching.
• 2.5V drive.
• High resistance to damage from ESD (TYP 300V)
[with a protection diode connected between the gate and source].
Absolute Maximum Ratings at Ta=25°C
Gate-to-Source Voltage (*1)
Drain Current (DC)
Drain Current (Pulse)
IDP PW≤10µs, duty cycle≤1%
Allowable Power Dissipation
--55 to +150
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics at Ta=25°C
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Reverse Transfer Capacitance
Marking : XG
1.5 1.9 Ω
2.0 2.8 Ω
4.0 8.0 Ω
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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
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83005PE MS IM TA-101198 No.8649-1/4