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Sanyo Electric Components Datasheet

CPH3356 Datasheet

P-Channel Silicon MOSFET

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Ordering number : ENA1124
CPH3356
SANYO Semiconductors
DATA SHEET
CPH3356
Features
1.8V drive
Halogen free compliance
Protection diode in
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
--20
±10
--2.5
--10
1.0
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Package Dimensions
unit : mm (typ)
7015A-004
2.9
3
0.15
Product & Package Information
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
0.05
1
0.95
2
0.4
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
TL
Electrical Connection
3
1
2
http://semicon.sanyo.com/en/network
N3011PE TKIM TC-00002675 No. A1124-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

CPH3356 Datasheet

P-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
CPH3356
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--4.5V
ID=--0.5A, VGS=--2.5V
ID=--0.1A, VGS=--1.8V
VDS=--10V, f=1MHz
See specied Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--2.5A
IS=--2.5A, VGS=0V
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
PW=10μs
D.C.1%
G
VDD= --10V
ID= --1A
RL=10Ω
D VOUT
CPH3356
P.G 50Ω S
min
--20
Ratings
typ
--0.4
2.7
105
145
215
250
60
45
5.7
11
34
20
3.3
0.65
0.72
--0.87
max
--1
±10
--1.4
137
203
323
--1.5
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
--2.0 ID -- VDS
--1.8
--1.6
--1.4
--1.2
--1.0 VGS= --1.5V
--0.8
--0.6
--0.4
--0.2
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT14877
--3.0
VDS= --10V
--2.5
ID -- VGS
--2.0
--1.5
--1.0
--0.5
0
0
--0.5
--1.0
--1.5
Gate-to-Source Voltage, VGS -- V
--2.0
IT14878
No. A1124-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number CPH3356
Description P-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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CPH3356 Datasheet PDF






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