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CPH5804 - P-Channel Silicon MOSFET

Key Features

  • Package Dimensions.
  • Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3312) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density mounting. [MOSFET].
  • Low ON-resistance. 2.9 54.
  • Ultrahigh-speed switching.
  • 4V drive. [SBD].
  • Short reverse recovery time.
  • Low forward voltage. 1 0.95 0.6 1.6 0.6 2.8 [CPH5804] 3 2 0.4 0.15 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3312) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. 2.9 54 • Ultrahigh-speed switching. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage. 1 0.95 0.6 1.6 0.6 2.8 [CPH5804] 3 2 0.4 0.15 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.2 0.7 0.2 0.9 0.