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Sanyo Electric Components Datasheet

CPH5809 Datasheet

DC/DC Converter Applications

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Ordering number : ENN7267
CPH5809
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
CPH5809
DC / DC Converter Applications
Preliminary
Features
The CPH5809 composite device consists of follow-
ing two devices to facilitate high-density mounting.
One is an N-channel MOSFET that features low ON-
resistance, ultrahigh-speed switching, and low driving
voltage. The other is a schottky barrier diode that
features short reverse recovery time and low forward
voltage.
Each device incorporated in the CPH5809 is equiva-
lent to the MCH3411 and to the SBS005, respectively.
Package Dimensions
unit : mm
2171
2.9
543
[CPH5809]
1
0.95
2
0.4
0.15
0.05
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
0.4 SANYO : CPH5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : QK
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (600mm2!0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
30
±10
3
12
0.9
150
--55 to +125
30
30
1
10
--55 to +125
--55 to +125
Unit
V
V
A
A
W
°C
°C
V
V
A
A
°C
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83002 TS IM TA-3482 No.7267-1/5


Sanyo Electric Components Datasheet

CPH5809 Datasheet

DC/DC Converter Applications

No Preview Available !

CPH5809
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VR
VF1
VF2
IR
C
trr
Rthj-a
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=4V
ID=1A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=4V, ID=3.0A
VDS=10V, VGS=4V, ID=3.0A
VDS=10V, VGS=4V, ID=3.0A
IS=3.0A, VGS=0
IR=1mA
IF=0.5A
IF=1A
VR=15V
VR=10V, f=1MHz cycle
IF=IR=100mA, see specified Test Circuit.
Mounted on a ceramic board (600mm2!0.8mm)
Ratings
min typ
30
0.4
3.5 5.0
69
84
270
38
23
10
30
42
52
3.7
0.7
0.5
0.85
30
0.35
0.42
35
110
Unit
max
V
1 µA
±10 µA
1.3 V
S
90 m
118 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
0.4
0.47
500
15
V
V
V
µA
pF
ns
°C / W
Electrical Connection
543
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
12
(Top view)
Switching Time Test Circuit
[MOSFET]
VIN
4V
0V
VIN
VDD=15V
ID=1.5A
RL=10
PW=10µs
D.C.1%
D VOUT
G
CPH5809
P.G 50S
trr Test Circuit
[SBD]
Duty10%
50
10µs
100
--5V
10
trr
No.7267-2/5


Part Number CPH5809
Description DC/DC Converter Applications
Maker Sanyo Semicon Device
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CPH5809 Datasheet PDF






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