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CPH5809 - N-Channel Silicon MOSFET

Key Features

  • Package Dimensions.
  • The CPH5809 composite device consists of followunit : mm ing two devices to facilitate high-density mounting. 2171 One is an N-channel MOSFET that features low ONresistance, ultrahigh-speed switching, and low driving voltage. The other is a schottky barrier diode that features short reverse recovery time and low forward voltage. Each device incorporated in the CPH5809 is equivalent to the MCH3411 and to the SBS005, respectively. [CPH5809] 2.9 5 4 3 0.6.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com Ordering number : ENN7267 CPH5809 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5809 DC / DC Converter Applications Preliminary Features • Package Dimensions • The CPH5809 composite device consists of followunit : mm ing two devices to facilitate high-density mounting. 2171 One is an N-channel MOSFET that features low ONresistance, ultrahigh-speed switching, and low driving voltage. The other is a schottky barrier diode that features short reverse recovery time and low forward voltage. Each device incorporated in the CPH5809 is equivalent to the MCH3411 and to the SBS005, respectively. [CPH5809] 2.9 5 4 3 0.6 1 0.95 2 0.4 0.6 1.6 2.8 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.2 0.