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Ordering number:EN646D
DBA10
Diffused Junction Silicon Diode
1.0A Single-Phase Bridge Rectifier
Features
· Plastic molded structure. · Peak reverse voltage:VRM=100 to 600V · Average rectified current:IO=1.0A.
Package Dimensions
unit:mm 1093
[DBA10]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Conditions DBA10B DBA10C DBA10E 100 200 → → → → 400 → → → → → → → DBA10G 600 1.0 50 150 Unit V A A
Ta=60˚C
50Hz sine wave, 1cycle
˚C ˚C
→ –40 to +150
Electrical Characteristics at Ta = 25˚C
Parameter Forward Voltage Reverse Current Symbol VF IR IF=0.5A VRM:At each VRM Conditions Ratings min typ max 1.05 10 Unit V µA
SANYO Electric Co.,Ltd.