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ECH8601R - N-Channel Silicon MOSFET

Features

  • General-Purpose Switching Device.

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Full PDF Text Transcription

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www.DataSheet4U.com Ordering number : ENN8328 ECH8601R N-Channel Silicon MOSFET ECH8601R Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging Switch. Common-drain type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 ±12 6.5 40 1.4 1.
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