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Sanyo Electric Components Datasheet

ECH8601R Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENN8328
ECH8601R
N-Channel Silicon MOSFET
ECH8601R General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Built-in gate protection resistor.
2.5V drive.
Best suited for LiB charging and discharging Switch.
Common-drain type.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
20
±12
6.5
40
1.4
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : WB
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3.5A
ID=4A, VGS=4.5V
ID=4A, VGS=4.0V
ID=4A, VGS=3.1V
ID=2A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
min
20
0.5
7.0
Ratings
typ
max
Unit
V
1 µA
±10 µA
1.3 V
10 S
17 23 m
18 24 m
20 30 m
24 35 m
1140
pF
420 pF
190 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62405PE MS IM TB-00001317 No.8328-1/4


Sanyo Electric Components Datasheet

ECH8601R Datasheet

N-Channel Silicon MOSFET

No Preview Available !

Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
ECH8601R
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=6.5A
VDS=10V, VGS=10V, ID=6.5A
VDS=10V, VGS=10V, ID=6.5A
IS=6.5A, VGS=0V
Ratings
min typ max
Unit
425 ns
1500
ns
4000
ns
2860
ns
26.8
nC
1.4 nC
5.1 nC
0.75
1.2 V
Package Dimensions
unit : mm
7011-003
Top View
0.3
8
5
0.15
1
0.65
2.9
4
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
Electrical Connection
87 6 5
1234
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
Switching Time Test Circuit
VIN
4V
0V
VIN
PW=10µs
D.C.1%
G
VDD=10V
ID=3.5A
RL=2.86
D VOUT
Rg
P.G
50
ECH8601R
S
Rg=1k
No.8328-2/4


Part Number ECH8601R
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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ECH8601R Datasheet PDF





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