Ordering number : ENN8328
N-Channel Silicon MOSFET
ECH8601R General-Purpose Switching Device
• Low ON-resistance.
• Built-in gate protection resistor.
• 2.5V drive.
• Best suited for LiB charging and discharging Switch.
• Common-drain type.
Absolute Maximum Ratings at Ta=25°C
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Electrical Characteristics at Ta=25°C
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
Mounted on a ceramic board (900mm2!0.8mm)
--55 to +150
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Reverse Transfer Capacitance
Marking : WB
17 23 mΩ
18 24 mΩ
20 30 mΩ
24 35 mΩ
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applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
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any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62405PE MS IM TB-00001317 No.8328-1/4