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SavantIC

2N6495 Datasheet Preview

2N6495 Datasheet

Silicon Power Transistor

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SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·Designed for switching and wide-
band amplifier applications
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2N6495
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
150
80
7
10
70
150
-65~200
UNIT
V
V
V
A
W
MAX
4.37
UNIT
/W




SavantIC

2N6495 Datasheet Preview

2N6495 Datasheet

Silicon Power Transistor

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0
VCEsat Collector-emitter saturation voltage IC=10A; IB=1A
VBEsat
Base-emitter saturation voltage
IC=10A; IB=1A
VBE Base -emitter on voltage
ICEV Collector cut-off current
ICEO Collector cut-off current
IC=10A ; VCE=3V
VCE=150V;VBE(off)=-1.5V
TC=150
VCE=40V; IB=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=10A ; VCE=3V
fT Transition frequency
IC=1 A ; VCE=10V
Product Specification
2N6495
MIN TYP. MAX UNIT
80 V
1.5 V
2.0 V
2.8 V
0.1
1.0
mA
0.1 mA
0.1 mA
10 60
25 MHz
2


Part Number 2N6495
Description Silicon Power Transistor
Maker SavantIC
PDF Download

2N6495 Datasheet PDF






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