2N6495 Overview
Description
With TO-66 package - Low collector saturation voltage - Excellent safe operating area APPLICATIONS - Designed for switching and wideband amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 80 7 10 70 150 -65~200 UNIT V V V A W SYMBOL Rth j-C PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2N6495 SYMBOL TYP. MAX UNIT VCEO(SUS) VCEsat VBEsat VBE ICEV ICEO IEBO hFE fT Collector-emitter sustaining voltage IC=0.1 A ; IB=0 IC=10A; IB=1A IC=10A; IB=1A IC=10A ; VCE=3V VCE=150V;VBE(off)=-1.5V TC=150 VCE=40V; IB=0 VEB=7V; IC=0 IC=10A ; VCE=3V IC=1 A ; VCE=10V 80 V Collector-emitter saturation voltage 1.5 V Base-emitter saturation voltage 2.0 V Base -emitter on voltage 2.8 0.1 1.0 0.1 V Collector cut-off current mA Collector cut-off current mA Emitter cut-off current 0.1 mA DC current gain 10 60 Transition frequency 25 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6495 Fig.2 Outline dimensions 3.
