2N6495 Datasheet | SavantIC

DESCRIPTION - With TO-66 package - Low collector saturation voltage - Excellent safe operating area APPLICATIONS - Designed for switching and wideband amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 80 7 10 70 150 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 4.37 UNIT /W Savant IC Semiconductor .. Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN SYMBOL TYP. UNIT VCEO(SUS) VCEsat VBEsat VBE ICEV ICEO IEBO h FE f T Collector-emitter sustaining voltage IC=0.1 A ; IB=0 IC=10A; IB=1A IC=10A; IB=1A IC=10A ; VCE=3V VCE=150V;VBE(off)=-1.5V TC=150 VCE=40V; IB=0 VEB=7V; IC=0 IC=10A ; VCE=3V IC=1 A ; VCE=10V Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter on voltage 2.8 0.1 1.0 0.1 Collector cut-off current m A Collector cut-off current m A Emitter cut-off current 0.1 m A DC current gain Transition...