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SavantIC

2SB1362 Datasheet Preview

2SB1362 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PN package
·Wide area of safe operation
·Complement to type 2SD2053
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SB1362
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current -peak
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-150
-150
-5
-9
-15
100
150
-55~150
UNIT
V
V
V
A
A
W




SavantIC

2SB1362 Datasheet Preview

2SB1362 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A
VBE Base-emitter on voltage
IC=-7A;VCE=-5V
ICBO Collector cut-off current
VCB=-150V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
hFE-3
DC current gain
IC=-7A ; VCE=-5V
fT Transition frequency
IC=-0.5A ; VCE=-5V
COB Collector output capacitance
f=1MHz;VCB=-10V
Product Specification
2SB1362
MIN TYP. MAX UNIT
-150
V
-2.0 V
-1.8 V
-50 µA
-50 µA
20
60 200
15
15 MHz
270 pF
hFE-2 Classifications
QP
60-120
100-200
2


Part Number 2SB1362
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 3 Pages
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