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SavantIC

2SD1409 Datasheet Preview

2SD1409 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1409
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20Fa package
·High DC current gain
·DARLINGTON
APPLICATIONS
·Igniter applications
·High volitage switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector -emitter voltage
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
600
400
5
6
1
25
2.0
150
-55~150
UNIT
V
V
V
A
A
W
1




SavantIC

2SD1409 Datasheet Preview

2SD1409 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1409
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage
IC=10mA; IB=0
VCEsat Collector-emitter saturation voltage
IC=4A ;IB=0.04A
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.04A
VECF
Emitter-collector diode forward voltage IE=4A; IB=0
ICBO Collector cut-off current
VCB=600V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=2A ; VCE=2V
hFE-2
DC current gain
IC=4A ; VCE=2V
COB Collector output capacitance
f=1MHz ; VCB=50V;IE=0
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IB1=-IB2=0.04A
VCC=100V ,RL=25@
MIN TYP. MAX UNIT
400 V
2.0 V
2.5 V
3.0 V
0.5 mA
3 mA
600
100
35 pF
1 µs
8 µs
5 µs
2


Part Number 2SD1409
Description SILICON POWER TRANSISTOR
Maker SavantIC
PDF Download

2SD1409 Datasheet PDF






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