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SavantIC

2SD1975A Datasheet Preview

2SD1975A Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1975 2SD1975A
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPL package
·Complement to type 2SB1317/1317A
·Wide area of safe operation
·High transition frequency fT
APPLICATIONS
·For high power amplification
·Optimum for the output stage of a
Hi-Fi audio amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SD1975
2SD1975A
Open emitter
VCEO
Collector-emitter voltage
2SD1975
2SD1975A
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Ta=25
TC=25
Tstg Storage temperature
VALUE
180
200
180
200
5
15
25
3.5
150
150
-55~150
UNIT
V
V
V
A
A
W




SavantIC

2SD1975A Datasheet Preview

2SD1975A Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1975 2SD1975A
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEsat
VBE
ICBO
IEBO
hFE-1
hFE-2
hFE-3
fT
COB
Collector-emitter saturation voltage IC=10A ;IB=1A
Emitter-base voltage
IC=8A ; VCE=5V
Collector
cut-off current
2SD1975 VCB=180V; IE=0
2SD1975A VCB=200V; IE=0
Emitter cut-off current
VEB=3V; IC=0
DC current gain
IC=20mA ; VCE=5V
DC current gain
IC=1A ; VCE=5V
DC current gain
IC=8A ; VCE=5V
Transition frequency
IC=0.5A ; VCE=5V
Collector output capacitance
f=1MHz;VCB=10V
MIN TYP. MAX UNIT
2.5 V
1.8 V
50 µA
50 µA
20
60 200
20
20 MHz
200 pF
hFE-2 classifications
QSP
60-120 80-160 100-200
2


Part Number 2SD1975A
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 4 Pages
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