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2SD845 - SILICON POWER TRANSISTOR

Description

With MT-200 package Complement to type 2SB755 High transition frequency High breakdown voltage :VCEO=150V(min) APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and

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Datasheet Details

Part number 2SD845
Manufacturer SavantIC
File Size 152.63 KB
Description SILICON POWER TRANSISTOR
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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD845 www.datasheet4u.com DESCRIPTION ·With MT-200 package ·Complement to type 2SB755 ·High transition frequency ·High breakdown voltage :VCEO=150V(min) APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 12 1.
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