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SavantIC
SavantIC

BD649 Datasheet Preview

BD649 Datasheet

(BD645 - BD651) SILICON POWER TRANSISTOR

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BD649 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD645/647/649/651
DESCRIPTION
·With TO-220C package
www.dat·aCshoemet4pule.cmoment to type BD646/648/650/652
·DARLINGTON
APPLICATIONS
·For use in output stages in audio
equipment ,general amplifier,and
analogue switching applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BD645
VCBO
Collector-base voltage
BD647
BD649
BD651
BD645
VCEO
Collector-emitter voltage
BD647
BD649
BD651
VEBO
Emitter-base voltage
IC Collector current-DC
ICM Collector current-Pulse
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
80
100
120
140
60
80
100
120
5
8
12
0.3
62.5
150
-65~150
UNIT
V
V
V
A
A
mA
W



SavantIC
SavantIC

BD649 Datasheet Preview

BD649 Datasheet

(BD645 - BD651) SILICON POWER TRANSISTOR

No Preview Available !

BD649 pdf
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD645/647/649/651
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
BD645
V(BR)CEO
Collector-emitter
breakdown voltage
BD647
BD649
IC=30mA, IB=0
BD651
VCEsat-1
VCEsat-2
VBEsat
VBE
ICBO
ICEO
IEBO
hFE
Collector-emitter saturation voltage IC=3A ,IB=12mA
Collector-emitter saturation voltage IC=5A ,IB=50mA
Base-emitter saturation voltage
IC=5A ,IB=50mA
Base-emitter on voltage
BD645
Collector cut-off current
BD647
BD649
BD651
BD645
IC=3A ; VCE=3V
VCB=60V, IE=0
VCB=40V, IE=0 ;TC=150
VCB=80V, IE=0
VCB=50V, IE=0 ;TC=150
VCB=100V, IE=0
VCB=60V, IE=0 ;TC=150
VCB=120V, IE=0
VCB=70V, IE=0 ;TC=150
VCE=30V, IB=0
Collector cut-off current
BD647
BD649
VCE=40V, IB=0
VCE=50V, IB=0
BD651 VCE=60V, IB=0
Emitter cut-off current
VEB=5V; IC=0
DC current gain
IC=3A ; VCE=3V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MIN TYP. MAX UNIT
60
80
V
100
120
2.0 V
2.5 V
3.0 V
2.5 V
0.2
2.0
0.2
2.0 mA
0.2
2.0
0.2
2.0
0.5 mA
5 mA
750
MAX
2.0
UNIT
/W
2


Part Number BD649
Description (BD645 - BD651) SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 4 Pages
PDF Download
BD649 pdf
BD649 Datasheet PDF
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