S2000AF Description
VCE=5V;f=5MHz 8 7 MIN 700 10 .. S2000AF SYMBOL VCEO(SUS) V(BR)EBO VCE(sat) VBE(sat) ICES IEBO hFE fT TYP. MAX UNIT V V 1.0 1.3 1 2 1 V V mA mA MHz Switching times inductive load ts tf Storage time Fall time 7 0.55 µs µs IC=4.5A.
| Part number | S2000AF |
|---|---|
| Download | S2000AF Datasheet (PDF) |
| File Size | 265.66 KB |
| Manufacturer | SavantIC |
| Description | SILICON POWER TRANSISTOR |
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| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
S2000AF | High voltage NPN Power transistor |
STMicroelectronics |
S2000AFI | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
Toshiba |
S2000A | Silicon NPN Transistor |
Toshiba |
S2000 | Silicon NPN Transistor |
Inchange Semiconductor |
S2000 | NPN Transistor |
VCE=5V;f=5MHz 8 7 MIN 700 10 .. S2000AF SYMBOL VCEO(SUS) V(BR)EBO VCE(sat) VBE(sat) ICES IEBO hFE fT TYP. MAX UNIT V V 1.0 1.3 1 2 1 V V mA mA MHz Switching times inductive load ts tf Storage time Fall time 7 0.55 µs µs IC=4.5A.