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Savantic

D44H11 Datasheet Preview

D44H11 Datasheet

Silicon NPN Power Transistors

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SavantIC Semiconductor
www.DataSheet4U.com
Silicon NPN Power Transistors
Product Specification
D44H11
DESCRIPTION
·With TO-220C package
·Fast switching speeds
·Low collector saturation voltage
APPLICATIONS
·For general purpose power amplification
and switching regulators,converters and
power amplifiers applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-Peak
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
VALUE
80
80
5
10
20
50
1.67
150
-55~150
UNIT
V
V
V
A
A
W
VALUE
2.5
UNIT
/W




Savantic

D44H11 Datasheet Preview

D44H11 Datasheet

Silicon NPN Power Transistors

No Preview Available !

SavantIC Semiconductor
www.DataSheet4U.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=10mA IB=0,
VCEsat Collector-emitter saturation voltage IC=8A; IB=0.4A
VBEsat
Base-emitter saturation voltage
IC=8A ;IB=0.8A
ICES Collector cut-off current
VCE=80V; VBE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=2A ; VCE=1V
hFE-2
DC current gain
IC=4A ; VCE=1V
fT Transition frequency
IC=0.5A ; VCE=10V
Ccb Collector capacitance
f=1MHz ; VCB=10V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=5A IB1=- IB2=0.5A
Product Specification
D44H11
MIN TYP. MAX UNIT
80 V
1.0 V
1.5 V
10 µA
0.1 mA
60
40
50 MHz
130 pF
0.3 µs
0.5 µs
0.14 µs
2


Part Number D44H11
Description Silicon NPN Power Transistors
Maker Savantic
PDF Download

D44H11 Datasheet PDF






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