2N7002W Overview
The Power Dissipation of the package may result in a lower continuous drain current. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. FR 5 = 1.0 x 0.75 x 0.062 in.
| Part number | 2N7002W |
|---|---|
| Datasheet | 2N7002W-SeCoS.pdf |
| File Size | 307.69 KB |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Description | Small Signal MOSFET |
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The Power Dissipation of the package may result in a lower continuous drain current. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. FR 5 = 1.0 x 0.75 x 0.062 in.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N7002W | N-Channel Power Mosfet | GME |
| 2N7002W | N-channel MOSFET | Fairchild Semiconductor | |
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2N7002W | N-Channel MOSFET | JCET |
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2N7002W | N-Channel MOSFET | Kexin |
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2N7002W | N-Channel MOSFET | Weitron Technology |
See all SeCoS Halbleitertechnologie GmbH datasheets
| Part Number | Description |
|---|---|
| 2N7002K | N-channel MOSFET |
| 2N7002KDW | Dual N-Channel MOSFET |
| 2N7002KG | N-Ch Small Signal MOSFET |
| 2N7002KW | N-channel MOSFET |
| 2N7002T | Small Signal MOSFET |
| 2N7000 | N-Channel Enhancement Mode Power MosFET |