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SeCoS

2N7002W Datasheet Preview

2N7002W Datasheet

Small Signal MOSFET

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Elektronische Bauelemente
2N7002W
115 mAMPS, 60VOLTS, RDS(on)=7.5
Small Signal MOSFET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
N–Channel SOT–323
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Drain Current
– Continuous TC = 25°C (Note 1.)
– Continuous TC = 100°C (Note 1.)
– Pulsed (Note 2.)
VDSS
VDGR
ID
ID
IDM
60
60
±ā115
±ā75
±ā800
Vdc
Vdc
mAdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp 50 µs)
THERMAL CHARACTERISTICS
VGS
VGSM
±ā20
±ā40
Vdc
Vpk
Characteristic
Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
RθJA
PD
556 °C/W
300 mW
mW/°C
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
TJ, Tstg
417
ā55 to
+150
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
http://www.SeCoSGmbH.com
01-Jun-2005 Rev. A
A
L
3
BS
12
VG
C
DH
N–Channel
3
12
2
SOT–323
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
12
Gate Source
K72 , 702 = Device Code
KJ
Any changing of specification will not be informed individual
Page 1 of 3




SeCoS

2N7002W Datasheet Preview

2N7002W Datasheet

Small Signal MOSFET

No Preview Available !

Elektronische Bauelemente
2N7002W
115 mAMPS, 60VOLTS, RDS(on)=7.5
Small Signal MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = –ā20 Vdc)
TJ = 25°C
TJ = 125°C
V(BR)DSS
IDSS
IGSSF
IGSSR
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
On–State Drain Current
(VDS 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc) TC = 25°C
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
TC = 125°C
Forward Transconductance
(VDS 2.0 VDS(on), ID = 200 mAdc)
VGS(th)
ID(on)
VDS(on)
rDS(on)
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(VDD = 25 Vdc, ID ^ 500 mAdc,
RG = 25 , RL = 50 , Vgen = 10 V)
BODY–DRAIN DIODE RATINGS
td(on)
td(off)
Diode Forward On–Voltage
(IS = 11.5 mAdc, VGS = 0 V)
Source Current Continuous
(Body Diode)
VSD
IS
Source Current Pulsed
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
ISM
Min
60
1.0
500
80
Typ Max Unit
– – Vdc
– 1.0 µAdc
– 500
– 100 nAdc
– –100 nAdc
– 2.5 Vdc
– – mA
Vdc
– 3.75
– 0.375
Ohms
– 7.5
– 13.5
– 7.5
– 13.5
– – mmhos
– 50 pF
– 25 pF
– 5.0 pF
– 20 ns
– 40 ns
– –1.5 Vdc
– –115 mAdc
– –800 mAdc
http://www.SeCoSGmbH.com
01-Jun-2005 Rev. A
Any changing of specification will not be informed individual
Page 2 of 3


Part Number 2N7002W
Description Small Signal MOSFET
Maker SeCoS
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2N7002W Datasheet PDF






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