S8050T
S8050T is NPN Transistor manufactured by SeCoS Halbleitertechnologie GmbH.
FEATURES z plimentary to S8550T z Collector Current: IC = 0.5 A
4.5 0.2
4.55 0.2
TO-92
3.5 0.2
(1.27 Typ.)
12 3
1.25 0.2
2.54 0.1
14.3 0.2
0.46 0.1
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature
Symbol
VCBO VCEO VEBO
IC PD TJ, TSTG
Ratings
40 25 5 500 625 +150, -55 ~ +150
0.08 0.07
1: Emitter 2: Base 3: Collector
Unit
V V V m A m W ℃
ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified)
Parameter
Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current
DC Current Gain
Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Transition Frequency
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO
ICBO ICEO IEBO h FE(1) h FE(2) VCE(sat) VBE(sat) f T
Min.
40 25 5 85 50 150
Typ.
- Max.
0.1 0.1 0.1 400 0.6 1.2
- Unit
V V V μA μA μA
V V...
