| Part Number | SDT3P02-C |
| Manufacturer | SeCoS |
| Title | Dual-P Enhancement Mode MOSFET |
| Description | The SDT3P02-C is the highest performance trench Dual-P MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for m... |
| Features |
er
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1 @VGS=4.5V Pulsed Drain Current 3
TA=25°C ID
TA=70°C
IDM
Total Power Dissipation
TA=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Th...
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| Datasheet |
 SDT3P02-C Datasheet 393.47KB |
