SDT9A5P02
SDT9A5P02 is P-Channel Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SDT9A5P02 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The SDT9A5P02 meet the Ro HS and Green Product requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
MARKING
9A5P02
.
= Date code
PACKAGE INFORMATION
Package
DFN2×2-6J
3K
Leader Size 7 inch
DFN2x2-6J
REF.
A B C D E F G
Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66
0.65 TYP. 0.20 0.40 0.80 1.00 0.174 0.326
REF.
H I J K L M
Millimeter
Min. Max.
- 0.85 1.05
0.70 0.90
0.20 0.40
0.203REF
0.00 0.05
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS= -4.5V...
