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SID05N60J - N-Channel MOSFET

General Description

This advanced high voltage MOSFET is designed to stand huge energy in the avalanche mode and switch efficiently.

This new device also offers a drain-to-source diode fast recovery time.

Key Features

  • Lower RDS(on) High current rating Lower capacitance Lower total gate charge Avalanche energy specified.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SID05N60J 5A, 600V, RDS(ON) 2.5 Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION This advanced high voltage MOSFET is designed to stand huge energy in the avalanche mode and switch efficiently. This new device also offers a drain-to-source diode fast recovery time. Designed for high voltage, the device has high-speed switching applications such as power supplies, converters, power motor controls and bridge circuits.