SID05N60J Description
This advanced high voltage MOSFET is designed to stand huge energy in the avalanche mode and switch efficiently. This new device also offers a drain-to-source diode fast recovery time. Designed for high voltage, the device has high-speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
SID05N60J Key Features
- 55 ~ 150
- 1.8 Dynamic Characteristics
- Output Capacitance
- Reverse Transfer Capacitance
- 8.5 Switching Characteristics
- Turn-Off Delay Time
- Fall Time
- Notes: 1. 2