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SID05N60J Datasheet - SeCoS

N-Channel MOSFET

SID05N60J Features

* Lower RDS(on) High current rating Lower capacitance Lower total gate charge Avalanche energy specified MARKING CJD05N60B = Date Code MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse A

SID05N60J General Description

This advanced high voltage MOSFET is designed to stand huge energy in the avalanche mode and switch efficiently. This new device also offers a drain-to-source diode fast recovery time. Designed for high voltage, the device has high-speed switching applications such as power supplies, converters, pow.

SID05N60J Datasheet (267.88 KB)

Preview of SID05N60J PDF

Datasheet Details

Part number:

SID05N60J

Manufacturer:

SeCoS

File Size:

267.88 KB

Description:

N-channel mosfet.
Elektronische Bauelemente SID05N60J 5A, 600V, RDS(ON) 2.5 Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies hal.

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SID05N60J N-Channel MOSFET SeCoS

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