SID40N03 - N-Channel Enhancement Mode PowerMos FET

SeCoS

Datasheet Details

Part number	SID40N03
Manufacturer	SeCoS
File Size	640.81 KB
Description	N-Channel Enhancement Mode PowerMos FET
Datasheet	SID40N03-SeCoS.pdf

The SID40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Repetitive Avalanche Rated.
Dynamic dv/dt Rating.
Simple Drive Requirement.
Fast Switching TO-251 6.6±0.2 5.3±0.2 2.3±0.1 0.5±0.05 5.6±0.2 7.0±0.2 7.0±0.2 1.2±0.3 0.75±0.15 0.6±0.1 G 2.3REF. DS 0.5±0.1 Dimensions in millimeters D Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Stor.

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Published: Sep 30, 2018 |