900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SeCoS

SID9973 Datasheet Preview

SID9973 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Elektronische Bauelemente
SID9973
14A, 60V,RDS(ON)80m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SID9973 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-251 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Features
* Low Gate Charge
* Simple Drive Requirement
TO-251
6.6±0.2
5.3±0.2
2.3±0.1
0.5±0.05
5.6±0.2
7.0±0.2
7.0±0.2
1.2±0.3
0.75±0.15
0.6±0.1
G
2.3REF.
DS
0.5±0.1
Dimensions in millimeters
D
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Marking Code: 9973
G XXXX(Date Code)
S
Symbol
VDS
VGS
ID@TC=25oC
ID@TC=100oC
IDM
PD@TC=25oC
Tj, Tstg
Ratings
60
± 20
14
9
40
27
0.22
-55~+150
Unit
V
V
A
A
A
W
W / oC
oC
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Max.
Max.
Symbol
Rthj-c
Rthj-a
Ratings
4.5
110
Unit
oC /W
oC /W
Any changing of specification will not be informed individual
Page 1 of 4




SeCoS

SID9973 Datasheet Preview

SID9973 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Elektronische Bauelemente
SID9973
14A, 60V,RDS(ON)80m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
BVDS/ Tj
VGS(th)
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current(Tj=150oC)
IGSS
IDSS
Static Drain-Source On-Resistance
RD S(O N )
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
60
_
1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.05
_
_
_
_
_
_
8
3
4
7
15
16
3
720
77
45
8.6
Max.
_
_
3.0
±100
1
25
80
100
13
_
_
_
_
_
_
1150
_
_
_
Unit
V
V/ oC
Test Condition
VGS=0V, ID=250uA
Reference to 25oC, ID=1mA
V VDS=VGS, ID=250uA
nA VGS=±20V
uA VDS=60V,VGS=0
uA VDS=48V,VGS=0
VGS=10V, ID=9A
m
VGS=4.5V, ID=6A
ID=9 A
nC VDS=48V
VGS= 4.5V
VDD=30V
ID=9A
nS VGS=10V
RG=3.3
RD=3.3
VGS=0V
pF VDS=25V
f=1.0MHz
S VDS=10V, ID=9A
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Change
Symbol
VSD
Trr
Qrr
Min.
_
_
_
Typ.
_
28
27
Max.
1.2
_
_
Unit Test Condition
V IS=14 A, VGS=0V.
nS IS=9 A, VGS=0V.
nC dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
ttp://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4


Part Number SID9973
Description N-Channel Enhancement Mode Power MOSFET
Maker SeCoS
Total Page 4 Pages
PDF Download

SID9973 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SID9973 N-Channel Enhancement Mode Power MOSFET
SeCoS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy