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SID9973 Datasheet N-channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SID9973 14A, 60V,RDS(ON)80m N-Channel Enhancement Mode Power Mos.

General Description

The SID9973 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-251 is universally preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement TO-251 6.6±0.2 5.3±0.2 2.3±0.1 0.5±0.05 5.6±0.2 7.0±0.2 7.0±0.2 1.2±0.3 0.75±0.15 0.6±0.1 G 2.3REF. DS 0.5±0.1 Dimensions in millimeters D Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Marking Code: 9973 G XXXX(Date Code).

More Datasheets from SeCoS Halbleitertechnologie GmbH

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SID05N60J N-Channel MOSFET
SID15N10 N-Channel MOSFET
SID40N03 N-Channel Enhancement Mode PowerMos FET

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