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SID9973 - N-Channel MOSFET

Description

The SID9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Low Gate Charge.
  • Simple Drive Requirement TO-251 6.6±0.2 5.3±0.2 2.3±0.1 0.5±0.05 5.6±0.2 7.0±0.2 7.0±0.2 1.2±0.3 0.75±0.15 0.6±0.1 G 2.3REF. DS 0.5±0.1 Dimensions in millimeters D Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Marking Code: 9973 G XXXX(Date Code).

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Datasheet Details

Part number SID9973
Manufacturer SeCoS
File Size 757.14 KB
Description N-Channel MOSFET
Datasheet download datasheet SID9973 Datasheet

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Full PDF Text Transcription

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Elektronische Bauelemente SID9973 14A, 60V,RDS(ON)80m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SID9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-251 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features * Low Gate Charge * Simple Drive Requirement TO-251 6.6±0.2 5.3±0.2 2.3±0.1 0.5±0.05 5.6±0.2 7.0±0.2 7.0±0.2 1.2±0.3 0.75±0.15 0.6±0.1 G 2.3REF. DS 0.5±0.
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