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SMG2307PE - P-Channel MOSFET

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. SC-59 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15.

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Datasheet preview – SMG2307PE

Datasheet Details

Part number SMG2307PE
Manufacturer SeCoS
File Size 468.09 KB
Description P-Channel MOSFET
Datasheet download datasheet SMG2307PE Datasheet
Additional preview pages of the SMG2307PE datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMG2307PE -5.2 A, -20 V, RDS(ON) 31 mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. SC-59 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF.
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