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SMG2319P

Manufacturer: SeCoS Halbleitertechnologie GmbH

SMG2319P datasheet by SeCoS Halbleitertechnologie GmbH.

SMG2319P datasheet preview

SMG2319P Datasheet Details

Part number SMG2319P
Datasheet SMG2319P-SeCoS.pdf
File Size 770.55 KB
Manufacturer SeCoS Halbleitertechnologie GmbH
Description P-Channel MosFET
SMG2319P page 2 SMG2319P page 3

SMG2319P Overview

The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

SMG2319P Key Features

  • Low RDS(on) provides higher efficiency and extends battery life
  • Fast Switch
  • Low Gate Charge
  • Miniature SC-59 Surface Mount Package Saves
  • 30 ±20 -2.1 -1.7 ±10 -0.4 1.25 0.8 -55 ~ 150
  • 2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET
  • ±100 nA VDS =0, VGS= ±20V
  • A VDS = -5V, VGS= -4.5V
  • S VDS= -5V,,ID = -2.1A
  • ID= -2.1A
SeCoS Halbleitertechnologie GmbH logo - Manufacturer

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