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SMG2359P

Manufacturer: SeCoS Halbleitertechnologie GmbH

SMG2359P datasheet by SeCoS Halbleitertechnologie GmbH.

SMG2359P datasheet preview

SMG2359P Datasheet Details

Part number SMG2359P
Datasheet SMG2359P-SeCoS.pdf
File Size 499.41 KB
Manufacturer SeCoS Halbleitertechnologie GmbH
Description P-Channel MosFET
SMG2359P page 2 SMG2359P page 3

SMG2359P Overview

The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

SMG2359P Key Features

  • Low RDS(on) provides higher efficiency and extends battery life
  • Fast Switch
  • Low Gate Charge
  • Miniature SC-59 Surface Mount Package Saves
  • 60 ±20 -1.7 -1.4 ±15 -1.7 1.3 0.8 -55 ~ 150
  • 1.7A , -60V , RDS(ON) 381 m P-Channel Enhancement MOSFET
  • ±100 nA VDS =0, VGS= ±20V
  • 1 -2.1 -3.5
  • 300 381
  • 450 561
SeCoS Halbleitertechnologie GmbH logo - Manufacturer

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