SMG2390N Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET 1.1 A, 150 V, RDS(ON) 0.700  RoHS pliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. Features - Low RDS(on) provides higher efficiency and extends battery life. - Low thermal impedance copper leadframe SC-59 saves board space. - Fast switching speed. -...