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SMG2390N N-Channel MosFET

SMG2390N Description

Elektronische Bauelemente SMG2390N N-Channel Enhancement Mode Mos.FET 1.1 A, 150 V, RDS(ON) 0.700  RoHS Compliant Product A suffix of “-C” specifie.
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat diss.

SMG2390N Features

* Low RDS(on) provides higher efficiency and extends battery life.
* Low thermal impedance copper leadframe SC-59 saves board space.
* Fast switching speed.
* High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 150 RDS(on) ( 0.700@VGS= 10V 1.200@VGS= 5.5V

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Datasheet Details

Part number
SMG2390N
Manufacturer
SeCoS
File Size
138.39 KB
Datasheet
SMG2390N-SeCoS.pdf
Description
N-Channel MosFET

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N-Channel MosFET SeCoS
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