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SMG4KN25-C - N-Ch Enhancement Mode Power MOSFET

Description

The SMG4KN25-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Features

  • Advanced High Cell Density Trench Technology.
  • Super Low Gate Charge.
  • Green Device Available.

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Datasheet Details

Part number SMG4KN25-C
Manufacturer SeCoS
File Size 519.32 KB
Description N-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SMG4KN25-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente SMG4KN25-C 0.37A, 250V, 4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG4KN25-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMG4KN25-C meet the RoHS and Green Product requirement with full function reliability approved.
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