SMS6001 Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 440mA, 60V, RDS(ON) 2Ω N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage ESD Rating: 2KV HBM APPLICATION DC-DC converter circuit Load Switch DEVICE MARKING: W61- - = Date Code PACKAGE INFORMATION Package SOT-23 3K Lea...