SMS6001 - N-Channel MOSFET

Description

The SMS6001 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

SeCoS

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Datasheet Details

Part number	SMS6001
Manufacturer	SeCoS
File Size	656.35 KB
Description	N-Channel MOSFET
Datasheet	SMS6001 Datasheet
Additional preview pages of the SMS6001 datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SMS6001 440mA, 60V, RDS(ON) 2Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage ESD Rating: 2KV HBM APPLICATION DC-DC converter circuit Load Switch DEVICE MARKING: W61* * = Date Code PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7’ inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF.

Published: Apr 1, 2016 |