SSD09N65H-C
SSD09N65H-C is N-Channel Super Junction Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SSD09N65H-C is power MOSFET using Super Junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SSD09N65H-C meet the Ro HS and Green Product requirement with full function reliability approved.
FEATURES
Advanced Super Junction Technology Super Low Gate Charge Green Device Available
MARKING
09N65H
= Date Code
PACKAGE INFORMATION
Package
TO-252
2.5K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
SSD09N65H-C Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC=25°C
Continuous Drain Current 1 @VGS=10V
TC=100°C
Pulsed Drain Current 3
Total Power Dissipation
TC=25°C
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient 1 RθJA
Maximum Thermal Resistance Junction-Ambient 2
Maximum Thermal Resistance Junction-Case...
