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SSD1K7N70H-C - N-Channel MOSFET

General Description

The SSD1K7N70H-C is power MOSFET using Super Junction technology that can realize very low on-resistance and gate charge.

It will provide much high efficiency by using optimized charge coupling technology.

Key Features

  • Advanced Super Junction Technology Super Low Gate Charge Green Device Available.

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Datasheet Details

Part number SSD1K7N70H-C
Manufacturer SeCoS
File Size 694.82 KB
Description N-Channel MOSFET
Datasheet download datasheet SSD1K7N70H-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSD1K7 70H-C 4.5A, 700V, RDS(O ) 1.7Ω -Channel Super Junction Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD1K7N70H-C is power MOSFET using Super Junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSD1K7N70H-C meet the RoHS and Green Product requirement with full function reliability approved.