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SSD1K7N70H-C Datasheet Preview

SSD1K7N70H-C Datasheet

N-Channel MOSFET

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Elektronische Bauelemente
SSD1K7 70H-C
4.5A, 700V, RDS(O ) 1.7Ω
-Channel Super Junction Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD1K7N70H-C is power MOSFET using Super
Junction technology that can realize very low on-resistance
and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly
devices give an advantage of low EMI to designers as well as
low switching loss, which provide excellent RDS(ON) and gate
charge for most of the synchronous buck converter applications.
The SSD1K7N70H-C meet the RoHS and Green Product
requirement with full function reliability approved.
FEATURES
Advanced Super Junction Technology
Super Low Gate Charge
Green Device Available
MARKING
7N70H
= Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
ORDER INFORMATION
Part Number
Type
SSD1K7N70H-C Lead (Pb)-free and Halogen-free
TO-252(D-Pack)
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.3 6.9 J
2.3 REF.
B 4.95 5.53 K 0.89 REF.
C 2.1 2.5 M 0.45 1.14
D 0.4 0.9 N 1.55 Typ.
E6
7.7 O 0 0.15
F 2.90 REF P 0.58 REF.
G 5.4
H 0.6
6.4
1.2
2
Drain
1
Gate
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1 @VGS=10V
Pulsed Drain Current 3
Total Power Dissipation 1
TC=25°C
TC=100°C
TC=25°C
ID
IDM
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient 1
Maximum Thermal Resistance Junction-Ambient 2
RθJA
Maximum Thermal Resistance Junction-Case
RθJC
http://www.SeCoSGmbH.com/
10-Dec-2019 Rev. A
Ratings
700
±30
4.5
3.2
26
52
-55~150
3
Source
Unit
V
V
A
A
W
°C
62.5
110 °C/W
2.4
Any changes of specification will not be informed individually.
Page 1 of 4




SeCoS

SSD1K7N70H-C Datasheet Preview

SSD1K7N70H-C Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SSD1K7 70H-C
4.5A, 700V, RDS(O ) 1.7Ω
-Channel Super Junction Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
BVDSS
700
-
-
Gate Threshold Voltage
Gate-Source Leakage Current
VGS(th)
IGSS
2
-
-4
- ±100
Drain-Source Leakage Current
Static Drain-Source On-Resistance 4
IDSS
RDS(ON)
-
-
-1
1.5 1.7
Total Gate Charge
Gate-Source Charge
Qg - 6.1 -
Qgs - 1.3 -
Gate-Drain Change
Turn-on Delay Time
Qgd - 3.3 -
Td(on)
-
11
-
Rise Time
Turn-off Delay Time
Fall Time
Tr - 25 -
Td(off)
-
30
-
Tf - 24 -
Input Capacitance
Ciss - 225 -
Output Capacitance
Coss - 300 -
Reverse Transfer Capacitance
Continuous Source Current 1
Pulsed Source Current 3
Diode Forward Voltage 4
Crss - 12
Source-Drain Diode
IS - -
ISM -
VSD -
-
-
-
4.5
28
1.4
Reverse Recovery Time
Trr - 358 -
Reverse Recovery Charge
Qrr - 1.5 -
Notes:
1. Surface Mounted on 1inch2 FR4 Board with 2OZ copper.
2. When mounted on Min. copper pad.
3. Pulse Width limited by maximum junction temperature, pulse width10us, duty cycle2%.
4. The data tested by pulsed, Pulse Width300µs, Duty Cycle2%.
Unit
V
V
nA
µA
Test Conditions
VGS=0, ID=250µA
VDS=VGS, ID=250µA
VGS=±30V
VDS=560V, VGS=0
VGS=10V, ID=1A
ID=1A
nC VDS=560V
VGS=10V
VDS=350V
nS
ID=1A
VGS=10V
RG=25Ω
VGS=0V
pF VDS=25V
f=1MHz
A
A
V IS=1A, VGS=0
nS IF=1A, dI/dt=100A/µs,
nC VDD=100V, TJ=25°C
http://www.SeCoSGmbH.com/
10-Dec-2019 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4


Part Number SSD1K7N70H-C
Description N-Channel MOSFET
Maker SeCoS
Total Page 4 Pages
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