SSD65N10S-C
SSD65N10S-C is N-Ch Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
SSD65N10S-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
SSD65N10S-C meets the Ro HS and Green Product requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
MARKING
65N10S
Date Code
PACKAGE INFORMATION
Package
TO-252
2.5K
Leader Size 13 inch
ORDER INFORMATION
Part Number
Type
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1 @VGS=10V Pulsed Drain Current 2
TC=25°C ID
TC=100°C
Power Dissipation
TC=25°C
Operating Junction & Storage Temperature
Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case 1
TJ, TSTG Thermal Resistance Ratings
RθJA RθJC
TO-252(D-Pack)...
