* Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 80N03 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A BC D GE K HF MJ N O P REF. Millimeter Min. Max. REF.
SSD80N03 Datasheet (397.25 KB)
SSD80N03
SeCoS
397.25 KB
N-channel mosfet.
Elektronische Bauelemente SSD80N03 80A , 30V , RDS(ON) 5.5mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha.
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