SSE104N10-C
SSE104N10-C is N-Ch Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SSE104N10-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SSE104N10-C meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
TO-220
FEATURES
Advanced High Cell Density Trench Technology Super Low Gate Charge 100% EAS Guaranteed Green Device Available
MARKING
104N10
Date Code
ORDER INFORMATION
Gate
Part Number
Type
SSE104N10-C Lead (Pb)-free and Halogen-free
Drain
Source
REF.
A B C D E F G
Millimeter
Min. Max.
9.96 10.36
2.74 BSC.
12.7 14.73
1.15 1.82
0.39 1.01
3.56 4.82
REF.
H I J K L M
Millimeter Min. Max.
2.54 BSC. 2.04 2.92
3.745 REF. 0.356 0.5 5.85 6.85 0.51 1.39
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source...
