SSG4401P Key Features
- 55 ~ 150
- 3.6 A, -150 V, RDS(ON) 160 mΩ P-Ch Enhancement Mode Power MOSFET
- S VDS= -15V, ID= -2.8A
- V IS= -2.1A, VGS=0
- VDS=-15V
- pF VGS=0
- Total Gate Charge Gate-Source Charge Gate-Drain Charge
- ID= -2.8A
- nC VDS= -75V
- VGS= -4.5V
- Part: SSG4401P
- Description: P-Ch Enhancement Mode Power MOSFET
- Manufacturer: SeCoS Halbleitertechnologie GmbH
- Size: 460.54 KB
Related SeCoS Halbleitertechnologie GmbH Datasheets
| Part Number | Description |
|---|---|
| SSG4402N | N-Ch Enhancement Mode Power MOSFET |
| SSG4403 | P-Ch Enhancement Mode Power MOSFET |
| SSG4406F-C | N-Ch Enhancement Mode Power MOSFET |
| SSG4407 | P-Channel Enhancement Mode Power MosFET |
| SSG4407J-C | P-Channel Enhancement Mode Power MosFET |