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SSG4401P - P-Ch Enhancement Mode Power MOSFET

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology.

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Datasheet preview – SSG4401P

Datasheet Details

Part number SSG4401P
Manufacturer SeCoS
File Size 460.54 KB
Description P-Ch Enhancement Mode Power MOSFET
Datasheet download datasheet SSG4401P Datasheet
Additional preview pages of the SSG4401P datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSG4401P -3.6 A, -150 V, RDS(ON) 160 mΩ P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ SOP-8 2.
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